document number: 88685 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-oct-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 ultrafast plastic rectifier mur420 vishay general semiconductor features ? glass passivated chip junction ? ultrafast reverse recovery time ? low forward voltage drop ? low leakage current ? low switching losses, high efficiency ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. mechanical data case: do-201ad molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 4.0 a v rrm 200 v i fsm 150 a t rr 25 ns v f 0.710 v t j max. 175 c do-201ad maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit maximum repetitive pe ak reverse voltage v rrm 200 v working peak reverse voltage v rwm 200 v maximum dc blocking voltage v dc 200 v maximum average forward rectified current at t a = 80 c (fig. 1) i f(av) 4.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 150 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88685 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-oct-09 mur420 vishay general semiconductor note (1) pulse test: t p = 300 s pulse, duty cycle 2 % note (1) lead length = 1/2" on p.c.b. with 1.2" x 1.2" (30.5 mm x 30.5 mm) copper surface ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive pe ak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage 3.0 a t j = 150 c v f (1) 0.710 v t j = 25 c 0.875 4.0 a 0.890 maximum instantaneous reverse current at rated dc blocking voltage t j = 25 c i r (1) 5.0 a t j = 150 c 150 maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 25 ns maximum reverse recovery time i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 10 % i rm t rr 35 ns maximum forward recovery time i f = 1.0 a, di/dt = 100 a/s, recovery to 1.0 v t fr 25 ns thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance junction to ambient r ja (1) 28 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode mur420-e3/54 1.138 54 1400 13" diameter paper tape and reel mur420-e3/73 1.138 73 1000 ammo pack packaging 0 2.0 4.0 6.0 8.0 0 25 50 75 100 125 150 175 ambient temperature (c) average forwar d current (a) 0 50 75 100 125 150 25 1 100 10 number of cycle s at 60 hz peak forwar d s urge current (a)
document number: 88685 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-oct-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 mur420 vishay general semiconductor fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance package outline dimensions in inches (millimeters) 0.4 0.2 0.6 0.8 1.0 1.2 1.4 0.01 0.1 10 100 1 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 25 c t j = 100 c t j = 175 c 60 40 20 0 100 80 0.001 0.01 0.1 1 10 100 1000 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e leakage current (a) t j = 25 c t j = 100 c t j = 175 c 1 0.1 10 100 1000 10 100 1 rever s e voltage (v) junction capacitanc e (pf) do-201ad 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2)
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